LDMOS for RF Power Amplifier (SE54-26-0)

SynopsisIn increasingly expanding wireless communication market, there is a huge demand for high performance power device and Radio Frequency (RF) LDMOS is becoming increasingly important in wireless communication applications, superseding SiGe as the technology of choice for RF in cellular base station RF power amplifiers (PAs) modules. The excellent performance, efficiency and power density of LDMOS (Laterally Diffused MOS) make it an ideal candidate for such applications. LDMOS can also be engaged in HF, VHF and UHF broadcast transmitters, and microwave radar and avionics systems. As compared to other RF power technologies, LDMOS is able to deliver higher peak-to-average power ratios (PAR) for the new-generation base station amplifiers. For multimedia services, LDMOS can ensure high gain and linearity, and can achieve higher data rates.

The ongoing efforts to improve device performances include the optimization of the device layout, the reduction of gate resistance, etc. However, device performance remains limited by the large parasitic feedback capacitance and the serious hot-carrier degradation, which not only results a low ft, but also poor RF output power. It is therefore imperative for RF engineers or designers to have the essential background knowledge of the LDMOS, PA techniques, LDMOS fabrication process, device performances, yield and reliability issues for the ultimate goal of attaining high performance system.

What previous participants say about this course Answers to the question 'what did you like most about the course'

• "The instructor conducted the course in detail" - 14 Nov 05
• "The presentation by the preseter is clear and understandable" - 14 Nov 05
• "Lecturer is very nice and good in explanation" - 14 Nov 05
• "Easy to understand" - 14 Nov 05
• "Useful fundamental knowledge of MOS & LDMOS" - 14 Nov 05
• "Summarized important notes for subject presented" - 14 Nov 05
• "SEM pictures and layout of the ICs" - 14 Nov 05
• "Knowledge on die architecture and impact on product performance" - 14 Nov 05

What You Will Learn

• MOS Transistors
• Semiconductor Fabrication and a review of device technologies for power amplifier design
• DMOS Technology
• Failure Mechanisms
• Extended-voltage transistors and power MOS transistors
• Revision Of Basic Power Amplifier Theory
• CMOS Power Amplifiers
• RF and Microwave Power Amplifier and Transmitter Technologies
• Linearity and Efficiency of RF Power Amplifiers

Who Should AttendTechnicians, engineers, circuit designers, and managers involved in design, testing or sourcing of analog, RF or Mixed Signal Semiconductors / circuits including:

• Design engineers and Managers
• Process engineers
• Test engineers
• Yield analysis engineers
• Product engineers
• FA engineers
• Reliability engineers
• Packaging engineers
• Application engineering

PrerequisiteParticipants should have a basic background and understanding of semiconductor technologies and device physics. Previous familiarity will be advantageous in maximizing the impact of the course on the participant. Nonetheless, these concepts will be quickly reviewed as needed.

Course MethodologyThis course is presented in an interactive classroom style utilizing many practical examples.

Course Duration2 days, 9 am - 5 pm

Course StructureDay 1

• MOS Transistors - Modeling the MOS transistor, self-aligned poly-gate CMOS transistors.
• Semiconductor Fabrication - Silicon Manufacture, Photolithography, Oxide Growth and Removal, Diffusion and Ion Implantation, Silicon Deposition, Metallization and Assembly.
• Review Of Device Technologies For Power Amplifier Design: LDMOS, GaAs MESFET And HBT, SiC and GaN.
• DMOS Technology - process flow.

• Failure Mechanisms - Electrical Overstress, Contamination, Surface Effects, and Parasitic.
• Extended-Voltage Transistors - LDD and DDD transistors, Extended-drain transistors, and Multiple Gate Oxides.
• Power MOS Transistors - Conventional MOS Power Transistors and DMOS transistors.
• MOS Transistor Matching - Geometric effects, diffusion and etch effects, thermal and stress effects, common centroid layout of MOS transistors, and Rules for MOS transistor matching.
• Overview of RF and Microwave Power Amplifier and Transmitter Technologies - load-pull characterization, stability, microwave implementation, example applications, competing technologies, as well as ways of improving efficiency and linearity (if time permits)